NCP110AMX105TBG onsemi

Here is the English description of the NCP110AMX105TBG chip:

• Function: N-channel power MOSFET
• Drain-Source Breakdown Voltage: 20V
• Continuous Drain Current: 1.1A
• On-Resistance: 105mΩ (typ)
• Low charge storage behavior
• PowerSO8 package

The NCP110AMX105TBG is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching up to 1.1A
• Low RDS(on) of 105mΩ minimizes conduction losses
• Fast switching speed suitable for PWM control
• PowerSO8 package provides good thermal performance

Common Applications:

• Point-of-load DC/DC converters under 1.1A load
• Motor driver circuits requiring up to 1.1A
• Switching applications below 1.1A current

Benefits include reliable 1.1A performance with low resistance, enabling efficiency. Compact PowerSO8 package suits integration.

Well suited for precise control of currents up to 1.1A where losses are critical.

In summary, the NCP110AMX105TBG delivers 1.1A switching with low RDS(on) in a space-saving package for efficient power conversion.