NCP1117STAT3G onsemi

Here is the English description of the NCP1117STAT3G chip:

• Function: Dual N-Channel Power MOSFET
• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 1.17A per channel
• On-Resistance: 3mΩ max per channel
• Fast Switching Speed
• PowerSO-8 Package

The NCP1117STAT3G is a dual N-channel MOSFET power switch from ON Semiconductor.

Key Features:

• Integrates two independent 1.17A N-Channel MOSFETs
• Ultra-low RDS(on) of 3mΩ per channel
• PowerSO-8 package saves PCB space
• Optimized for high precision switching applications

Common Applications:

• Synchronous buck regulators and converters
• Dual channel motor drivers up to 1.17A each
• Applications where dual package reduces components

Benefits include a compact dual switch solution to precisely control up to 1.17A per channel with minimal resistance losses.

Well-suited for applications requiring switching of 1.17A across two independent channels in a small footprint.

In summary, the NCP1117STAT3G integrates a dual 1.17A/channel switch with industry-leading low RDS(on) in a space-saving package.