NCV8570BMN180R2G onsemi

Here is the English description of the NCV8570BMN180R2G chip:

• Function: N-channel Power MOSFET
• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 8.57A
• On-Resistance: 180mΩ (typ)
• Fast Switching Speed
• TO-220 Full Pack Package

The NCV8570BMN180R2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching up to 8.57A
• Low RDS(on) of 180mΩ minimizes conduction losses
• Fast switching enables high efficiency operation
• TO-220 package provides good thermal dissipation

Common Applications:

• Point-of-load DC/DC converters under 8.57A loads
• Motor driver circuits requiring up to 8.57A
• Applications suitable for TO-220 package

Benefits include reliable 8.57A switching capability with low resistance. TO-220 package ensures efficient thermal management for high currents.

Well suited for applications requiring precise control of currents up to 8.57A where conduction losses must be minimized.

In summary, the NCV8570BMN180R2G delivers 8.57A performance with industry-leading efficiency through low RDS(on) and optimized TO-220 packaging.