NCP161ASN330T1G onsemi

Here is the English description of the NCP161ASN330T1G chip:

• Function: Dual N-Channel MOSFET
• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 1.61A per channel
• On-Resistance: 330mΩ (typ) per channel
• Fast Switching Speed
• PowerSO-8 Package

The NCP161ASN330T1G is a dual N-channel MOSFET from ON Semiconductor.

Key Features:

• Integrated dual switch capable of 1.61A per channel
• Low RDS(on) of 330mΩ per channel reduces losses
• PowerSO-8 package saves space on circuit boards
• Allows independent control of two 1.61A loads

Common Applications:

• Synchronous buck converters and regulators
• Dual channel motor driver circuits up to 1.61A each
• Any application requiring dual independent switches

Benefits include a compact dual switch solution optimized to efficiently control up to 1.61A per channel.

Well-suited for applications requiring independent switching of 1.61A loads across two channels in a minimized footprint.

In summary, the NCP161ASN330T1G integrates a dual 1.61A/channel switch with low resistance in a small package.