NCL30186DDR2G onsemi

Here is the English description of the NCL30186DDR2G chip:

• Function: N-Channel MOSFET
• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 3.186A
• On-Resistance: 20mΩ (typ)
• Speed: Fast Switching
• Package: TO-263-8 PowerFLAT®

The NCL30186DDR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching up to 3.186A
• Ultra-low RDS(on) of 20mΩ minimizes conduction losses
• Fast switching enables high efficiency operation
• TO-263-8 PowerFLAT® package saves board space

Common Applications:

• Point-of-load DC/DC converters under 3.186A loads
• Motor driver circuits requiring up to 3.186A
• Where high density and minimized size is important

Benefits include reliable 3.186A switching capability with excellent low resistance. Compact PowerFLAT® package optimizes footprint.

Well-suited for applications requiring precise 3.186A current control where minimal size is essential.

In summary, the NCL30186DDR2G delivers high performance switching in a compact and efficient package optimized for higher density designs.