NCP382HD10AAR2G onsemi

Here is the English description of the NCP382HD10AAR2G chip:

• Function: N-Channel Power MOSFET
• Drain-Source Breakdown Voltage: 40V
• Continuous Drain Current: 10A
• On-Resistance: 10mΩ (max)
• Operating Temperature: -40°C to 150°C
• Package: TO-252-3

The NCP382HD10AAR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Provides efficient switching of up to 10A loads
• Industry-leading low 10mΩ RDS(on) for minimal losses
• Extended temperature range of -40°C to 150°C
• TO-252-3 package allows for robust mounting

Common Applications:

• Point-of-load DC/DC converters under 10A loads
• Motor driver circuits up to 10A
• Industrial equipment requiring high/low temperature reliability

Benefits include reliable 10A switching capability with best-in-class low resistance, in a rugged package across broad operating conditions.

Well-suited for applications requiring precise control of up to 10A currents where temperature extremes must be withstood.

In summary, the NCP382HD10AAR2G delivers high current switching with industry-leading efficiency in the harshest environments.