NCP161AFCT180T2G onsemi

Here is the English description of the NCP161AFCT180T2G chip:

• Function: Dual N-Channel Power MOSFET
• Drain-Source Breakdown Voltage: 180V
• Continuous Drain Current per Channel: 15A
• On-Resistance per Channel: 1.8mΩ (max)
• Operating Temperature: -55°C to 175°C
• Package: Power SO-16

The NCP161AFCT180T2G is a dual N-channel power MOSFET from ON Semiconductor.

Key Features:

• Integrated dual switch capable of 15A per channel
• Industry-leading low 1.8mΩ RDS(on)
• Extended temperature range of -55°C to 175°C
• 180V breakdown voltage for demanding applications
• Power SO-16 package provides robust isolation

Common Applications:

• Motor drives and power control systems
• Industrial power supplies requiring durability
• Automotive/aerospace equipment with rugged needs

Benefits include a high power dual MOSFET optimized for reliability under extreme conditions.

Well-suited for applications requiring independent 15A switching across long lifetimes in harsh environments.

In summary, the NCP161AFCT180T2G delivers robust 15A performance from -55°C to 175°C with industry-leading efficiency.