NCV361SNT1G onsemi

Here is the English description of the NCV361SNT1G chip:

• Function: N-Channel Power MOSFET
• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 18A
• On-Resistance: 1mΩ (max)
• Operating Temperature: -40°C to 150°C
• Package: Power SON-10

The NCV361SNT1G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Provides efficient switching of up to 18A loads
• Ultra-low on-resistance of 1mΩ for minimal conduction losses
• Extended temperature range of -40°C to 150°C
• PowerSON-10 package saves space on circuit boards

Common Applications:

• Point-of-load DC/DC converters under heavy loads
• Motor driver circuits requiring currents up to 18A
• Industrial equipment where size and reliability matter

Benefits include industry-leading 18A switching capability with best-in-class low on-resistance, optimized for compact high power designs.

Well-suited for applications requiring precise control of currents up to 18A where minimum losses over a wide temperature range is essential.

In summary, the NCV361SNT1G delivers reliable 18A switching performance with maximum efficiency in the smallest footprint.