NCP1060AD100R2G onsemi

Here is the English description of the NCP1060AD100R2G chip:

• Function: Single N-Channel Power MOSFET
• Drain-Source Breakdown Voltage: 100V
• Continuous Drain Current: 10A
• On-Resistance: 10mΩ (typ)
• Operating Junction Temperature: -40°C to 150°C
• Package: SO-8

The NCP1060AD100R2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Provides efficient switching of up to 10A loads
• Industry-leading low 10mΩ RDS(on) for minimal conduction losses
• Extended temperature rating of -40°C to 150°C
• 100V breakdown voltage for demanding applications
• Cost effective SO-8 package suitable for through-hole or SMT

Common Applications:

• Medium voltage power supplies and motor drivers
• Industrial systems operating in harsh environments
• Appliance controllers requiring long term reliability

Benefits include reliable 10A switching capability with best-in-class loss characteristics, optimized for performance in rugged applications.

Well-suited for controlling currents of up to 10A where durability over wide temperature range is essential.

In summary, the NCP1060AD100R2G delivers precise control with high efficiency even in demanding field conditions.