NCV70517MW002R2G onsemi

Here is the English description of the NCV70517MW002R2G chip:

• Function: Dual N-Channel Power MOSFET
• Drain-Source Breakdown Voltage: 20V
• Continuous Drain Current per Channel: 2A
• On-Resistance per Channel: 2.5mΩ (max)
• Operating Temperature: -40°C to 150°C
• Package: Power SO-8

The NCV70517MW002R2G from ON Semiconductor is a dual N-channel power MOSFET.

Key Features:

• Provides two independent 2A switching channels
• Industry-leading low 2.5mΩ max RDS(on) for high efficiency
• Extended temperature rating from -40°C to 150°C
• Small Power SO-8 package saves space

Common Applications:

• Point-of-load regulation requiring dual 2A switching
• Motor drivers and power supply half-bridge circuits
• Industrial systems demanding robust power devices

Benefits Include:

• Optimized for applications up to 2A per channel
• Enables compact dual channel designs from small package
• Reliable Gatesource-Drain performance in harsh conditions

Well-suited for applications requiring precise dual 2A switching where high integration density and reliability are needed.

In summary, the NCV70517MW002R2G offers industry-leading dual 2A switching control from an ultra-compact Power MOSFET solution.