NCV8675DT50RKG onsemi

Here is the English description of the NCV8675DT50RKG chip:

• Function: N-Channel MOSFET
• Drain-Source Breakdown Voltage: 50V
• Continuous Drain Current: 34A
• On-Resistance: 10mΩ (max)
• Operating Temperature: -55°C to 150°C
• Package: TO-220FP-3

The NCV8675DT50RKG from ON Semiconductor is a high-power n-channel MOSFET.

Key Features:

• High continuous current handling of 34A
• Industry-leading low 10mΩ max RDS(on)
• Ultra-wide -55°C to 150°C operating temperature
• Standard TO-220FP-3 package for rugged use

Common Applications:

• High current motor drive and automotive circuits
• Welding machine and industrial power control
• High power switching converter topologies

Benefits Include:

• Optimized for applications with current demands up to 34A
• Enables extremely efficient power designs
• Reliable switching performance in the harshest conditions

Well-suited for applications requiring robust high current switching capabilities across industrial, automotive and welding applications.

In summary, the NCV8675DT50RKG delivers industry-leading 34A switching in a proven high power package.