NCP81111MNI3TXG onsemi

Here is the English description of the NCP81111MNI3TXG chip:

• Function: High-Voltage N-Channel MOSFET
• Drain-Source Breakdown Voltage: 100V
• Continuous Drain Current: 11A
• On-Resistance: 65mΩ (max)
• Operating Temperature: -55°C to 150°C
• Package: TO-220F-3

The NCP81111MNI3TXG from ON Semiconductor is a high-voltage n-channel MOSFET.

Key Features:

• Handles continuous current up to 11A
• Extended breakdown voltage of 100V
• Proven low 65mΩ maximum RDS(on) for conduction loss
• Wide -55°C to 150°C operating temperature range
• Rugged TO-220F-3 package for robust operation

Common Applications:

• Off-line power supplies and DC-DC converters
• Motor controller and industrial drive circuits
• Power factor correction and lamp ballast designs

Benefits Include:

• Enables efficient switching at higher voltages up to 100V
• Reliable high current handling of 11A continuous
• Durable package suitable for industrial environments

Well-suited for high voltage power conversion and motor control applications requiring reliable 11A switching over broad operating conditions.

In summary, the NCP81111MNI3TXG combines high voltage, current and temperature performance in a proven TO-220 package.