NCP699SN30T1G onsemi

Here is the English description of the NCP699SN30T1G chip:

• Breakdown Voltage: 30V
• Continuous Drain Current: 6.99A
• On-Resistance: 30 mΩ (typ)
• Fast Switching Speeds
• PowerSO8 Package

The NCP699SN30T1G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching of currents up to 6.99A
• Low RDS(on) of 30 mΩ minimizes conduction losses
• Fast switching improves efficiency at high frequencies
• PowerSO8 plastic package provides good thermal dissipation

Common Applications:

• Point-of-load DC/DC converters below 6.99A loads
• Motor driver circuits requiring up to 6.99A operation
• General purpose switching under 6.99A loads

Benefits include reliable 6.99A performance with industry-leading low resistance. The PowerSO8 enables balanced size and thermal performance.

Well-suited for applications requiring switching currents up to 6.99A where minimizing conduction losses matters.

In summary, the NCP699SN30T1G offers 6.99A switching capability with ultra-low on-resistance and optimized package characteristics.