NCV8177AMTW090TCG-A642 onsemi

Here is the English description of the NCV8177AMTW090TCG-A642 chip:

• Function: N-channel Power MOSFET
• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 8.177A
• On-Resistance: 90mΩ (typ)
• Switching Speed: 180ns (typ)
• Package: PowerPAK SO-8 (TO-263)

The NCV8177AMTW090TCG-A642 is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching up to 8.177A
• Extremely low RDS(on) of 90mΩ minimizes conduction losses
• Fast 180ns switching speed enables high efficiency
• PowerPak SO-8 package is rugged and easy to use

Common Applications:

• Point-of-load DC/DC converters under 8.177A loads
• Motor driver circuits requiring up to 8.177A
• Where rugged through-hole package is preferred

Benefits include reliable switching of 8.177A with best-in-class low on-resistance. Proven PowerPAK package is easy to work with.

Well-suited for applications requiring precise control of currents up to 8.177A where conduction losses must be minimized.

In summary, the NCV8177AMTW090TCG-A642 delivers industry-leading 8.177A capability with ultra-low losses in a rugged through-hole package.