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Home > products > ICs Integrated Circuit > NCV1063AD100R2G onsemi

NCV1063AD100R2G onsemi

manufacturer:
onsemi
Description:
NCV1063AD100R2G onsemi SOIC-16
Category:
ICs Integrated Circuit
Specifications
Introduction

Here is the English description of the NCV1063AD100R2G chip:

  • Breakdown Voltage: 30V
  • Continuous Drain Current: 10.63A
  • On-Resistance: 100 mΩ (typ)
  • Fast Switching Speeds
  • PowerSO8 Package

The NCV1063AD100R2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Designed for efficient switching of currents up to 10.63A
  • Low RDS(on) of 100 mΩ minimizes conduction losses
  • Fast switching improves efficiency at high frequencies
  • PowerSO8 plastic package provides good thermal dissipation

Common Applications:

  • Point-of-load DC/DC converters below 10.63A loads
  • Motor driver circuits requiring up to 10.63A operation
  • General switching applications under 10.63A

Benefits include industry-leading 10.63A performance with low on-resistance. Reliable thermal characteristics in the PowerSO8 package.

Well-suited for applications requiring precise switching of currents up to 10.63A where conduction losses matter.

In summary, the NCV1063AD100R2G offers 10.63A switching capability with ultra-low resistance and optimized thermal handling.

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