NCP170ASN180T2G onsemi

Here is the English description of the NCP170ASN180T2G chip:

• Function: N-Channel Power MOSFET
• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 1.7A
• On-Resistance: 180mΩ (typ)
• Fast Switching Speed
• PowerSO-8 Package

The NCP170ASN180T2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching up to 1.7A
• Low RDS(on) of 180mΩ minimizes conduction losses
• Fast switching for high efficiency operation
• PowerSO-8 package provides good thermal dissipation

Common Applications:

• Point-of-load DC/DC converters under 1.7A load
• Motor driver and controller circuits up to 1.7A
• General purpose switching below 1.7A

Benefits include reliable 1.7A performance with ultra-low resistance. PowerSO-8 enables balanced size and thermal design.

Well suited for applications requiring precise control of currents up to 1.7A where conduction losses matter.

In summary, the NCP170ASN180T2G delivers 1.7A switching capability with industry-leading low resistance and optimized package.