|
| Brand Name: | TOSHIBA |
| Model Number: | TK7A90E,S4X |
| Document: | C5331584_%E5%9C%BA%E6%95%88...41.PDF |
| Manufacturer | Toshiba |
| Product Category | MOSFET |
| Technology | Si |
| Mounting Style | Through Hole |
| Package/Case | TO-220-3 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Drain-Source Voltage (Vds) | 900 V |
| Continuous Drain Current (Id) | 7 A |
| Drain-Source On-Resistance (Rds On) | 1.6 Ohms |
| Gate-Source Voltage (Vgs) | -30 V, +30 V |
| Gate Threshold Voltage (Vgs th) | 4 V |
| Gate Charge (Qg) | 32 nC |
| Fall Time | 15 ns |
| Rise Time | 20 ns |
| Turn-On Delay Time | 55 ns |
| Turn-Off Delay Time | 85 ns |
| Height | 15 mm |
| Length | 10 mm |
| Width | 4.5 mm |
| Unit Weight | 2 g |
