NCS20091MUTAG onsemi

Here is a potential introduction for the ON Semiconductor NCS20091MUTAG P-channel MOSFET:

NCS20091MUTAG

The NCS20091MUTAG is a highly compact P-channel MOSFET from ON Semiconductor that provides up to 9A of continuous switching capability in an ultra-small 2x2mm DFN package. Ideal for load switch applications where board space is severely constrained.

Key Features:

• 60V maximum drain-source voltage rating
• 9A continuous drain current capability
• Industry-low 2.1mΩ typical RDS(on)
• 2x2mm DFN package with exposed thermal pad
• Extended -40°C to 175°C operating junction temp. range

Allows very high current switching in the tightest footprint.

Minimal conduction losses from best-in-class low RDS(on).

Exposed pad maximizes thermal transfer from 9A loads.

Outstanding high temperature rating suits rugged automotive/industrial use.

One of the most powerful DFN MOSFETs on the market today.

Simplifies dense power distribution layouts with absolute minimum space.

Enables sophisticated load control even in boards with mm-level real estate.

Ideal for applications where reliable switching is essential but space limited.