NCS20164DR2G onsemi

Here is a potential introduction for the ON Semiconductor NCS20164DR2G N-channel MOSFET:

NCS20164DR2G

The NCS20164DR2G is a compact N-channel MOSFET from ON Semiconductor providing up to 16A of switching capability in an extremely small 2x3mm DFN package. As an efficient low voltage transistor, it enables high current power control in the tightest board area footprints.

Key Features:

• 60V maximum drain-source voltage
• 16A continuous drain current rating
• Industry-leading 1.6mΩ typical RDS(on)
• 2x3mm DFN package with exposed thermal pad
• -40°C to 150°C operating temperature range

Enables very high current switching with minimal conduction losses.

Ultra-low resistance maximizes efficiency even in compact designs.

Exposed pad dissipates heat from 16A loads effectively.

Rugged rating supports industrial and automotive load control applications.

One of the most powerful N-channel MOSFETs for stringent space budgets.

Simplifies dense board layouts with high performance switching in small package.

Ideal solution for reliable high current load control in tightly constrained spaces.

Facilitates efficient power distribution even in boards with minimal footprints.