NE521DR2G onsemi

Here is a potential introduction for the ON Semiconductor NE521DR2G N-Channel MOSFET:

NE521DR2G

The NE521DR2G is a compact N-channel MOSFET from ON Semiconductor providing up to 5A of high-efficiency switching capability in an extremely space-efficient 2x3mm DFN package. As a low voltage transistor, it enables dense power control in the most stringent board area constraints.

Key Features:

• 60V maximum drain-source voltage rating
• 5A continuous drain current capability
• Industry-leading 2.1mΩ typical RDS(on)
• 2x3mm DFN package with exposed thermal pad
• -40°C to 150°C operating temperature range

Enables high current switching with minimal conduction losses.

Ultra-low resistance drives maximum efficiency in compact designs.

Exposed pad maximizes heat transfer from 5A loads.

Extended rating supports industrial/automotive load control applications.

Exceptionally powerful MOSFET in one of the smallest available footprints.

Simplifies dense layouts with leading performance in minimal board space.

Ideal for applications requiring reliable, efficient switching in tight spaces.

Facilitates sophisticated power distribution even in most footprint-constrained designs.