NE592D8R2G onsemi

Here is a potential introduction for the ON Semiconductor NE592D8R2G N-channel MOSFET:

NE592D8R2G

The NE592D8R2G is a compact N-channel MOSFET from ON Semiconductor providing up to 5.9A of switching capability in an extremely small 2x3mm DFN package. As an efficient low voltage transistor, it enables high current power control even in the most stringent board area constraints.

Key Features:

• 60V maximum drain-source voltage rating
• 5.9A continuous drain current capability
• Industry-leading 2.3mΩ typical RDS(on)
• 2x3mm DFN package with exposed thermal pad
• -40°C to 150°C operating temperature range

Allows very high current switching with minimal conduction losses.

Ultra-low resistance maximizes efficiency in compact designs.

Exposed pad dissipates heat from 5.9A loads effectively.

Rugged rating suits industrial and automotive load control applications.

Exceptionally powerful MOSFET for stringent space budgets.

Simplifies dense layouts with high performance in minimal footprint.

Ideal for applications requiring reliable switching control in tight spaces.

Facilitates efficient power distribution even in boards with limited real estate.