NCS20072DMR2G onsemi

Here is a potential introduction for the ON Semiconductor NCS20072DMR2G N-channel MOSFET:

NCS20072DMR2G

The NCS20072DMR2G is a compact N-channel MOSFET from ON Semiconductor providing up to 7A of high-efficiency switching capability in an extremely space-efficient 2x3mm DFN package. As a low voltage transistor, it enables dense power control layouts even in the most stringent board area constraints.

Key Features:

• 60V maximum drain-source voltage rating
• 7A continuous drain current capability
• Industry-leading 1.9mΩ typical RDS(on)
• 2x3mm DFN package with exposed thermal pad
• -40°C to 150°C operating temperature range

Enables very high current switching with minimal conduction losses.

Ultra-low resistance maximizes efficiency in compact designs.

Exposed pad dissipates heat from 7A loads effectively.

Rugged rating supports industrial and automotive applications.

One of the most powerful DFN MOSFETs for critical space budgets.

Simplifies dense layouts with leading performance in small footprint.

Ideal solution for reliable, high current switching in tightly constrained spaces.

Facilitates efficient power distribution even in boards with minimal footprint.