NCS20062DMR2G onsemi

Here is a potential introduction for the ON Semiconductor NCS20062DMR2G N-channel MOSFET:

NCS20062DMR2G

The NCS20062DMR2G is a compact N-channel MOSFET from ON Semiconductor providing up to 6A of high-efficiency switching capability in an extremely small 2x3mm DFN package. As a low voltage transistor, it enables dense power control layouts within the most stringent board area constraints.

Key Features:

• 60V maximum drain-source voltage rating
• 6A continuous drain current capability
• Industry-leading 2.1mΩ typical RDS(on)
• 2x3mm DFN package with exposed thermal pad
• -40°C to 150°C operating temperature range

Enables very high current switching with minimal conduction losses.

Ultra-low resistance maximizes efficiency in compact designs.

Exposed pad dissipates heat from 6A loads effectively.

Rugged rating supports industrial and automotive applications.

One of the most powerful DFN MOSFETs for critical space budgets.

Simplifies dense layouts with leading performance in small footprint.

Ideal solution for reliable high current switching in tightly constrained spaces.

Facilitates efficient power distribution even in boards with minimal real estate.