NCS213RSQT2G onsemi

Here is a potential introduction for the ON Semiconductor NCS213RSQT2G N-Channel MOSFET:

NCS213RSQT2G

The NCS213RSQT2G is a compact N-channel MOSFET from ON Semiconductor providing up to 2.1A of high-efficiency switching capability in an extremely space-efficient SOT-23 package. As an ultra-low voltage transistor, it enables dense power control even in the most stringent board area limitations.

Key Features:

• 30V maximum drain-source voltage rating
• 2.1A continuous drain current capability
• Industry-leading 1.5Ω typical RDS(on)
• SOT-23 surface mount package
• -55°C to 150°C operating temperature range

Enables medium current switching with minimal conduction losses.

Very low resistance maximizes efficiency in tightest designs.

Rugged rating suits industrial and automotive load control applications.

Tiny footprint simplifies dense layouts with leading performance.

Well-suited for reliable switching where space is severely limited.

Facilitates efficient power distribution even in boards with minimal space.

Ideal solution for various low voltage/current automotive and industrial circuits.