NCS20091SN2T1G onsemi

Here is a potential introduction for the ON Semiconductor NCS20091SN2T1G 900mA N-channel MOSFET:

NCS20091SN2T1G

The NCS20091SN2T1G is a high-performance N-channel MOSFET from ON Semiconductor providing up to 900mA of efficient switching capability. Available in an ultra-small SON package, it enables dense power control even in designs with the most stringent board area constraints.

Key Features:

• 30V maximum drain-source voltage rating
• 900mA continuous drain current capability
• Industry-leading 1.2Ω typical RDS(on)
• SON surface mount package
• -55°C to 150°C operating temperature range

Allows switching of medium currents with minimal conduction losses.

Extremely low resistance maximizes efficiency in tightly-spaced layouts.

Rugged rating supports applications from automotive to industrial.

Tiny footprint maximizes board space available for other components.

Well-suited for switching applications where PCB area is limited.

Facilitates flexible power distribution even in designs with tight constraints.

Ideal solution for various low voltage/current circuits with small size needs.

Enables reliable control of medium loads within the most stringent size budgets.