NCS210RSQT2G onsemi

Here is a potential introduction for the ON Semiconductor NCS210RSQT2G 1A N-channel MOSFET:

NCS210RSQT2G

The NCS210RSQT2G is a compact high-performance N-channel MOSFET from ON Semiconductor capable of switching up to 1A of current. Available in an ultra-small SOT23-5 package, it enables precise power control even in designs with the most stringent PCB footprint limitations.

Key Features:

• 30V maximum drain-source voltage rating
• 1A continuous drain current capability
• 1.6Ω typical RDS(on)
• SOT23-5 ultra small surface mount package
• -55°C to 150°C operating temperature range

Allows efficient switching of moderate currents within tight footprints.

Extremely low resistance maximizes power density in limited spaces.

Tiny footprint provides ultimate board space utilization benefits.

Rugged rating suits diverse industrial and automotive applications.

Well-suited for space-critical power distribution points on boards.

Simplifies implementing robust control where every mm2 is valuable.

Ideal precision power FET for high density boards demanding low inductance.

Enables reliable medium current switching within the most stringent constraints.