NCS2325DR2G onsemi

Here is a potential introduction for the ON Semiconductor NCS2325DR2G 2.5A N-channel MOSFET:

NCS2325DR2G

The NCS2325DR2G is a high-current N-channel MOSFET from ON Semiconductor providing up to 2.5A of efficient switching capability. Available in a compact DFN PowerFLAT® package, it enables dense power control even in boards with stringent thermal requirements.

Key Features:

• 30V maximum drain-source voltage rating
• 2.5A continuous drain current capability
• Industry-leading 1.9mΩ typical RDS(on)
• DFN PowerFLAT® package with exposed thermal pad
• -40°C to 150°C operating temperature range

Allows medium-high current switching with minimal conduction losses.

Exposed pad package effectively spreads heat from 2.5A loads.

Extremely low resistance maximizes efficiency within dense footprints.

Rugged rating supports automotive and industrial applications.

Thermal efficient package simplifies heat dissipation challenges.

Well-suited for space-critical switching where cooling is constrained.

Ideal solution for various power applications on density-optimized boards.

Enables reliable control of demanding loads under thermal limitations.