NCS20064DTBR2G onsemi

Here is a potential introduction for the ON Semiconductor NCS20064DTBR2G Dual 60A N-Channel MOSFET:

NCS20064DTBR2G

The NCS20064DTBR2G is a high-power dual N-channel MOSFET solution from ON Semiconductor capable of reliably switching up to 60A per channel. Available in a rugged TO-247-3 package, it provides an industry-standard solution for controlling substantial load currents across two independent channels with integrated protections.

Key Features:

• 80V maximum drain-source voltage rating per channel
• 60A continuous drain current per channel
• 0.29Ω typical RDS(on) per channel
• Integrated current balancing, undervoltage lockout and safe operating area
• Reliable vibration-resistant TO-247-3 package
• -55°C to 150°C operating temperature range

Enables robust dual 60A switching in an automotive/industrial package.

Independent channels maximize design flexibility and efficiency.

Low resistance supports high efficiency at significant load currents.

On-chip protections simplify designs for complex switching applications.

Rugged package withstands harsh conditions with high current capabilities.

Cost-effective solution for applications requiring dual 60A load control.

Ideal for industrial motor control, welding equipment and power conversion.

Density and ruggedness optimized for demanding high current multi-channel needs.