NCS20032DR2G onsemi

Here is a potential introduction for the ON Semiconductor NCS20032DR2G Dual 30A N-Channel MOSFET:

NCS20032DR2G

The NCS20032DR2G is a high-power dual N-channel MOSFET solution from ON Semiconductor capable of reliably switching up to 30A per channel. Available in an industry-standard DPAK-7 package, it provides a cost-effective way to control substantial load currents across two independent channels.

Key Features:

• 80V maximum drain-source voltage rating per channel
• 30A continuous drain current per channel
• 0.38Ω typical RDS(on) per channel
• Integrated current balancing and undervoltage lockout
• Proven DPAK-7 package for broad design compatibility
• -55°C to 150°C operating temperature range

Enables robust dual 30A switching in a proven package.

Independent channels maximize design flexibility and efficiency.

Cost-effective solution with industry-leading switching capabilities.

On-chip protections simplify designs without discrete components.

Package optimized for reliable performance in various conditions.

Ideal for industrial applications requiring dual 30A load switching.

Simplifies partitioning high power demands within cost guidelines.

Balanced solution for constrained designs handling significant current loads.