NCV20092DMR2G onsemi

Here is a potential introduction for the ON Semiconductor NCV20092DMR2G 90A Dual N-Channel MOSFET Module:

NCV20092DMR2G

The NCV20092DMR2G is a high-power dual N-channel MOSFET module from ON Semiconductor capable of reliably switching up to 90A per channel. Featuring two NCV20092 N-channel MOSFETs in a rugged TO-263-7 package, it provides a complete dual channel power solution.

Key Features:

• 80V maximum drain-source voltage rating per channel
• 90A continuous drain current capability per channel
• 0.16Ω typical RDS(on) per channel
• Industry-standard TO-263-7 plastic power package
• Extended -55°C to 150°C operating temperature range
• Gate drive, protection and thermal management

Enables robust dual channel switching of extreme 90A loads.

Complete module includes MOSFETs, drive, and protection for easy implementation.

Low resistance drives very high efficiency power conversion at significant currents.

Rugged package handles harsh vibration and thermal stresses with high reliability.

Ideal for motor drives, UPS/SMPS, welding equipment and other 90A switching needs.

On Semiconductor's highest capacity dual channel MOSFET solution for severe conditions.

Simplifies designs with a fully integrated high power dual MOSFET subsystem.