NCV20082DR2G onsemi

Here is a potential introduction for the ON Semiconductor NCV20082DR2G 80A Dual N-Channel MOSFET:

NCV20082DR2G

The NCV20082DR2G is a high-power dual N-channel MOSFET solution from ON Semiconductor capable of reliably switching up to 80A per channel. Available in the automotive-qualified TO-247 package, it provides industry-leading power handling performance with increased reliability.

Key Features:

• 80V maximum drain-source voltage rating per channel
• 80A continuous drain current capability per channel
• 0.16Ω typical RDS(on) per channel
• AEC-Q101 qualified TO-247 plastic power package
• -55°C to 150°C operating temperature range
• Matched low RDS(on) for optimized efficiency

Enables robust dual 80A load control ideal for automotive/industrial applications.

Package rated for automotive environments with wide thermal cycling ranges.

Closely matched channels maximize system efficiency during parallel operation.

AEC-Q101 qualification meets stringent automotive quality and reliability.

Ideal for electric vehicle drive, charging equipment and other heavy switching needs.

Highest performance dual 80A MOSFET solution optimized for automation industry.

On Semiconductor's top solution to maximize power density within system footprint.