NCS20034DR2G onsemi

Here is a potential introduction for the ON Semiconductor NCS20034DR2G N-Channel Power MOSFET:

NCS20034DR2G

The NCS20034DR2G provides industry-leading power density in ON Semiconductor's compact DFN package. As a 34A N-channel MOSFET, it enables unprecedented levels of high current switching within the most stringent board space constraints.

Key Features:

• 60V maximum drain-source voltage rating
• 34A continuous drain current capability
• 0.16Ω typical RDS(on)
• DFN-10 package footprint optimized for density
• -55°C to 175°C operating temperature range
• Automotive AEC-Q101 qualification
• RoHS compliant

Allows unprecedented 34A of switched power in minimal board space.

Outstanding power density maximizes capabilities within any footprint.

AEC-Q101 certification ensures reliability in demanding automotive systems.

DFN packaging provides excellent electrical and thermal performance.

Ideal for automotive gate drives, inverters, DC-DC converters and motor control.

Simply the leading solution for applications requiring extreme power density.

On Semiconductor's top power MOSFET optimized for critical high current systems.