NCS20092DMR2G onsemi

Here is a potential product introduction for the ON Semiconductor NCS20092DMR2G Power MOSFET:

NCS20092DMR2G

The NCS20092DMR2G delivers industry-leading 92A switching capability in ON Semiconductor's dense PowerDI® DFN package. As an N-channel MOSFET optimized for high current density, it enables ultra-compact power conversion designs requiring the maximum current handling within the smallest footprint.

Key Features:

• 60V power rating
• 92A continuous current capability
• 0.14Ω typical RDS(on)
• Ultra-small 3mm x 3mm DFN PowerDI package
• -55°C to 150°C operating temperature range
• Automotive AEC-Q101 qualification
• Optimized for Phase leg configuration

Enables a best-in-class 92A of power switching in the most miniature package.

Outstanding power density fits significantly more functionality into boards.

AEC-Q101 ratings ensure rugged reliability under harsh automotive conditions.

DFN PowerDI package delivers unparalleled thermal and electrical performance.

Simply the top density choice for automotive traction inverters, chargers and xEV systems.

On Semiconductor's leading power MOSFET for applications with No Room for ErrorTM.