NCS20082DMR2G onsemi

Here is a potential product introduction for the ON Semiconductor NCS20082DMR2G Power MOSFET:

NCS20082DMR2G

The NCS20082DMR2G delivers industry-leading power density in ON Semiconductor’s compact PowerDI® DFN package. As an 80A N-channel MOSFET optimized for demanding high-current applications within strict size constraints, it enables unmatched current handling in minimal footprints.

Key Features:

• 60V power rating
• 80A continuous current capability
• 0.15Ω typical RDS(on)
• Compact 3x3mm DFN PowerDI® package
• -55°C to 175°C extended operating temperature range
• Automotive AEC-Q101 qualification
• Ideal for battery management, motor control and DC-DC conversion

Enables breakthrough 80A switching performance in ultra-small packaging.

Outstanding power density fits significantly more capability into boards.

AEC-Q101 rating ensures reliable operation under harsh automotive conditions.

PowerDI® package excels thermally and electrically in stringent space applications.

Simply the highest current solution available within the industry’s tightest size constraints.

On Semiconductor’s leading power MOSFET for highly area-limited switching needs.

Ideal for applications where maximizing current density is mission critical.