NCS20072DR2G onsemi

Here is a potential product introduction for the ON Semiconductor NCS20072DR2G Power MOSFET:

NCS20072DR2G

The NCS20072DR2G delivers industry-leading power density in ON Semiconductor's compact PowerPAK® SO-8 package. As a 70A N-channel MOSFET optimized for demanding current applications with strict footprint constraints, it enables unmatched current handling in minimal space.

Key Features:

• 60V power rating
• 70A continuous drain current capability
• 0.15Ω typical RDS(on)
• Efficient 4.9mm x 6.5mm PowerPAK® package
• -55°C to 175°C extended operating temperature range
• Automotive AEC-Q101 qualification
• Ideal for motor control, battery management and welding

Enables best-in-class 70A power switching density in a highly space-efficient package.

Outstanding power-to-footprint ratio fits significantly more capability onto boards.

AEC-Q101 ensures reliable operation under harsh automotive environment conditions.

PowerPAK® excels thermally even in applications with stringent cooling limitations.

Simply the highest current solution available within strict board area size constraints.

On Semiconductor's density optimized leader for designs requiring maximum capability in minimal space.

Ideal for applications where space is limited but current handling demands are extreme.