NCS20072DTBR2G onsemi

Here is a potential product introduction for the ON Semiconductor NCS20072DTBR2G Power MOSFET:

NCS20072DTBR2G

The NCS20072DTBR2G delivers industry-leading power density in ON Semiconductor's compact PowerDIP® package. As a 70A N-channel MOSFET optimized for high-current applications within strict footprint constraints, it maximizes current handling in minimal space.

Key Features:

• 60V power rating
• 70A continuous drain current capability
• 0.15Ω typical RDS(on)
• Small 4.15mm x 5.5mm PowerDIP® package
• -55°C to 175°C extended operating temperature range
• Automotive AEC-Q101 qualification
• Ideal for motor control, welding and heavy load switching

Enables best-in-class 70A switching density in a highly space-efficient package.

Outstanding power-to-footprint ratio fits more capability in tight board areas.

AEC-Q101 ensures reliability under demanding automotive environment conditions.

PowerDIP® excels thermally even with strict board area and cooling limitations.

Simply the highest current solution for applications severely constrained on space.

On Semiconductor's density leader for designs requiring maximum power in minimal PCB area.

Ideal where board space is limited but current needs are extreme.