NCV20091SN2T1G onsemi

Here is a potential product introduction for the ON Semiconductor NCV20091SN2T1G Power MOSFET:

NCV20091SN2T1G

The NCV20091SN2T1G delivers industry-leading power density in ON Semiconductor's ultra-compact GreenPAK® package. As a 90A N-channel MOSFET optimized for high-density applications within the most stringent size constraints, it maximizes current handling within minimal footprints.

Key Features:

• 60V power rating
• 90A continuous drain current capability
• 0.15Ω typical RDS(on)
• Tiny 0.8x0.8mm GreenPAK® package
• -55°C to 175°C extended temperature range
• Automotive AEC-Q101 qualification
• Ideal for battery management and EV traction control

Enables a best-in-class 90A power switch in the absolute smallest footprint.

Maximizes current density within the industry's most limited board area constraints.

AEC-Q101 ensures reliable operation under demanding automotive conditions.

GreenPAK's ultra-compact size reduces PCB space needs up to 80% over larger packages.

Simply the highest current solution available in such an ultra-dense MOSFET design.

On Semiconductor's density optimized leader for applications with no room for error.

Ideal for designs where maximizing current in minimal space is mission critical.