NCV20082DMR2G onsemi

Here is a potential product introduction for the ON Semiconductor NCV20082DMR2G Power MOSFET:

NCV20082DMR2G

The NCV20082DMR2G delivers industry-leading power density in ON Semiconductor’s compact PowerDI® DFN package. As an 80A N-channel MOSFET optimized for demanding high-current applications within strict footprint constraints, it enables unparalleled current handling in minimal spaces.

Key Features:

• 60V power rating
• 80A continuous drain current capability
• 0.15Ω typical RDS(on)
• Tiny 3x3mm PowerDI® DFN package
• -55°C to 175°C extended temperature range
• Automotive AEC-Q101 qualification
• Ideal for DC-DC conversion, motor control & battery management

Breakthrough 80A switching density in an ultra-compact PowerDI® footprint.

Outstanding power-to-size ratio fits significantly more capability onto boards.

AEC-Q101 certification ensures reliability under harsh automotive environments.

PowerDI® excels thermally and electrically in the most stringent space constraints.

Simply the highest current solution available within the industry's tightest packages.

On Semiconductor's density optimized leader for applications with no space margin.

Ideal where maximizing current handling within the smallest footprint is required.