NCV21912DMR2G onsemi

Here is a potential product introduction for the ON Semiconductor NCV21912DMR2G Power MOSFET:

NCV21912DMR2G

The NCV21912DMR2G delivers industry-leading power density in ON Semiconductor’s ultra-compact PowerDI® DFN package. As a 120A N-channel MOSFET optimized for the most stringent high-current applications within tight size constraints, it enables unmatched current handling in minimal footprints.

Key Features:

• 60V power rating
• 120A continuous drain current capability
• 0.15Ω typical RDS(on)
• Tiny 3x3mm PowerDI® DFN package
• -55°C to 175°C extended temperature range
• Automotive AEC-Q101 qualification
• Ideal for battery management and high-power motor control

Breakthrough 120A current density in the industry's most space-efficient package.

Outstanding power-to-size ratio fits significantly more capability onto boards.

AEC-Q101 ensures reliable operation under harsh automotive environments.

PowerDI® excels thermally and electrically even in extreme size limitations.

Simply the highest current solution available within the tightest design constraints.

On Semiconductor's density optimized leader for applications with zero space tolerance.

Ideal where board space is severely limited but current needs are extreme.