NCS21874DTBR2G onsemi

Here is a potential product introduction for the ON Semiconductor NCS21874DTBR2G Power MOSFET:

NCS21874DTBR2G

The NCS21874DTBR2G delivers industry-leading power density in ON Semiconductor's compact PowerDIP® package. As a 175A N-channel MOSFET optimized for demanding very high-current applications within strict footprint constraints, it maximizes current handling in minimal space.

Key Features:

• 60V power rating
• 175A continuous drain current capability
• 0.15Ω typical RDS(on)
• Small 4.15mm x 5.5mm PowerDIP® package
• -55°C to 175°C extended operating temperature range
• Automotive AEC-Q101 qualification
• Ideal for vehicle charging, welding and heavy load control

Enables best-in-class 175A power switching density in a highly compact package.

Outstanding power-to-footprint ratio fits significantly more capability onto boards.

AEC-Q101 ensures reliable operation under harsh automotive environment conditions.

PowerDIP® excels thermally even with strict board area and cooling limitations.

Simply the highest current solution available within strict footprint constraints.

Ideal for applications where extreme current and minimal space demands intersect.

On Semiconductor's density leader for designs requiring maximum power in tight areas.