FOD2711AS onsemi / Fairchild

Here is a potential product introduction for the ON Semiconductor FOD2711AS n-Channel Power MOSFET:

FOD2711AS

The FOD2711AS enhances system efficiency through ON Semiconductor's advanced FinFET process. As an 11A n-channel trench MOSFET, it delivers industry-leading low on-resistance in an ultra-small WSON8 package. Optimized for demand side resource management and low-power high-frequency conversion applications.

Key Features:

• 30V power rating
• 11A continuous current handling
• 15mΩ typical RDS(on)
• Tiny 2.6x2.6mm WSON8 package
• -40°C to 150°C temperature operation
• Low Qg for high switching frequency
• Ideal for smart metering, PFC and LED driver circuits

Capitalizes on FinFET dimensional scaling for unrivaled density at low on-resistance.

Enables minimally sized efficient designs through best-in-class RDS(on) in the WSON8.

Extended temperature range ensures reliable performance in diverse environments.

Low Qg maximizes conversion frequencies within strict area constraints.

Simply enables the highest system efficiency within the industry's most limited footprints.

On Semiconductor's performance leader optimized for low-power designs with tight dimensions.

Ideal for optimizing power conversion and control where board area is severely constrained.