NCV20092DTBR2G onsemi

Here is a potential product introduction for the ON Semiconductor NCV20092DTBR2G Power MOSFET:

NCV20092DTBR2G

The NCV20092DTBR2G delivers industry-leading power density in ON Semiconductor's compact PowerDI® package. As a 90A N-channel MOSFET optimized for demanding current applications with strict footprint constraints, it maximizes current handling in minimal space.

Key Features:

• 60V power rating
• 90A continuous drain current capability
• 0.15Ω typical RDS(on)
• Tiny 3x3mm PowerDI® package
• -55°C to 175°C extended temperature range
• Automotive AEC-Q101 qualification
• Ideal for motor control, DC/DC conversion and load switching

Enables best-in-class 90A power density in the highly efficient and compact PowerDI® package.

Outstanding power-to-size ratio fits significantly more capability onto boards.

AEC-Q101 ensures reliable operation under demanding automotive environments.

PowerDI® excels both thermally and electrically within tight footprint limitations.

Simply the highest current solution available within strict area constraints.

On Semiconductor's density optimized leader for applications requiring maximum power in minimal space.

Ideal for designs where current needs are high but board area severely restricted.