NCS21911SN2T1G onsemi

Here is a suggested product introduction for the ON Semiconductor NCS21911SN2T1G Power MOSFET:

NCS21911SN2T1G

The NCS21911SN2T1G Power MOSFET from ON Semiconductor delivers industry-leading power density optimization for automotive applications. As a 19A MOSFET in the ultra-compact DFN PowerPAK package with AEC-Q101 qualification, it maximizes current handling within the most stringent automotive design constraints.

Key Features:

• 30V Drain-Source Voltage Rating
• 19A Continuous Drain Current Capability
• 77mΩ Typical On-Resistance (RDS(on))
• 3x3mm Miniature DFN PowerPAK Package
• -40°C to 150°C Operating Temperature Range
• AEC-Q101 Qualified for Automotive System Reliability
• Optimized for 48V Vehicle Architectures and Safety-Critical Systems

DFN PowerPAK's ultra-small footprint enables highest integration levels for automotive.

AEC-Q101 Qualification simplifies use in mission-critical automotive safety applications.

Designed specifically for next-generation 48V vehicle electrical systems and components.

When absolute minimum size with certified reliability is required.

Simply offers leading performance in automotive's smallest, certified package.

Enables innovations at the cutting edge of automotive semiconductor integration.