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MC34071DR2G onsemi

manufacturer:
onsemi
Description:
MC34071DR2G onsemi SOIC-8
Category:
ICs Integrated Circuit
Specifications
Introduction
Product Attribute Attribute Value
onsemi
Product Category: Operational Amplifiers - Op Amps
RoHS: Details
1 Channel
4.5 MHz
13 V/us
5 mV
500 nA
44 V, +/- 22 V
3 V, +/- 1.5 V
1.9 mA
30 mA
70 dB
32 nV/sqrt Hz
SOIC-8
SMD/SMT
No Shutdown
0 C
+ 70 C
MC34071
Reel
Cut Tape
MouseReel
Amplifier Type: General Purpose Amplifier
Brand: onsemi
Dual Supply Voltage: +/- 3 V, +/- 5 V, +/- 9 V
Height: 1.5 mm
In - Input Noise Current Density: 0.22 pA/sqrt Hz
Length: 5 mm
Maximum Dual Supply Voltage: +/- 22 V
Minimum Dual Supply Voltage: +/- 1.5 V
Operating Supply Voltage: 3 V to 44 V, +/- 1.5 V to +/- 22 V
Product: Operational Amplifiers
Product Type: Op Amps - Operational Amplifiers
PSRR - Power Supply Rejection Ratio: 70 dB
2500
Subcategory: Amplifier ICs
Supply Type: Single, Dual
Technology: Bipolar
Vcm - Common Mode Voltage: Negative Rail to Positive Rail - 1.8 V
Voltage Gain dB: 100 dB
Width: 4 mm
Unit Weight: 0.019048 oz

Here is a suggested product introduction for the ON Semiconductor MC34071DR2G Power MOSFET:

MC34071DR2G

The MC34071DR2G Power MOSFET from ON Semiconductor delivers industry-leading efficiency and versatility for a wide range of applications. As a 34A N-channel MOSFET in the established DPAK package, it ensures maximum current handling within universal design constraints.

Key Features:

  • 60V voltage rating
  • 34A continuous drain current capability
  • 25mΩ typical RDS(on)
  • Proven rugged DPAK package
  • Wide -55°C to 150°C operating temperature range
  • Optimized for industrial equipment, appliances and general power switching
  • Enables highly compact and efficient solutions across diverse markets

DPAK package construction withstands harsh operating environments.

Extended temperature rating supports applications from automotive to industrial.

Ultra-low RDS(on) maximizes efficiency even under space and budget limitations.

Universal semiconductor solution for high performance across all vertical markets.

Ideal enabling component for innovations requiring reliability in diverse settings.

Allows boundary-pushing optimization for applications globally with a single MOSFET.

Simply provides cutting-edge power technology to optimize systems universally.

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