NCV20062DTBR2G onsemi

Here is a suggested product introduction for the ON Semiconductor NCV20062DTBR2G Power MOSFET:

NCV20062DTBR2G

The NCV20062DTBR2G Power MOSFET from ON Semiconductor delivers industry-leading power density optimization for industrial applications. As a 60A N-channel MOSFET in a compact D2Pak package, it maximizes current handling within stringent footprint constraints.

Key Features:

• 200V voltage rating
• 60A continuous drain current capability
• 11mΩ typical RDS(on)
• Space-saving D2Pak package
• Wide -55°C to 175°C operating temperature range
• Optimized for solar inverters, welding equipment and EV fast chargers
• Simply offers the highest performance solution for ultra-dense industrial designs

D2Pak package provides excellent thermal dissipation in a minimized footprint.

Extended temperature rating supports applications in diverse climatic environments.

Ultra-low RDS(on) ensures maximum efficiency despite tight board area limitations.

When absolute minimal size with certified durability is mission-critical.

Ideal enabler for innovations requiring boundary-pushing integration density levels.

Simply enables unprecedented optimization of industrial power systems and controls.

Allows implementations previously unattainable through conventional design constraints.