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LM324DR2G onsemi

manufacturer:
onsemi
Description:
LM324DR2G onsemi SOIC-14
Category:
ICs Integrated Circuit
Specifications
Introduction
Product Attribute Attribute Value
onsemi
Product Category: Operational Amplifiers - Op Amps
RoHS: Details
4 Channel
1 MHz
600 mV/us
7 mV
250 nA
32 V, +/- 16 V
3 V, +/- 1.5 V
1.2 mA
40 mA
70 dB
-
SOIC-14
SMD/SMT
No Shutdown
0 C
+ 70 C
LM324
Reel
Cut Tape
MouseReel
Amplifier Type: Low Power Amplifier
Brand: onsemi
Dual Supply Voltage: +/- 3 V, +/- 5 V, +/- 9 V
Height: 1.5 mm
Length: 8.75 mm
Maximum Dual Supply Voltage: +/- 16 V
Minimum Dual Supply Voltage: +/- 1.5 V
Operating Supply Voltage: 3 V to 32 V, +/- 1.5 V to +/- 16 V
Product: Operational Amplifiers
Product Type: Op Amps - Operational Amplifiers
PSRR - Power Supply Rejection Ratio: 65 dB
2500
Subcategory: Amplifier ICs
Supply Type: Single, Dual
Technology: Bipolar
Vcm - Common Mode Voltage: Negative Rail to Positive Rail - 1.7 V
Voltage Gain dB: 100 dB
Width: 4 mm
Unit Weight: 0.011923 oz

Here is a suggested product introduction for the ON Semiconductor LM324DR2G Power MOSFET:

LM324DR2G

The LM324DR2G Power MOSFET from ON Semiconductor delivers industry-leading power density optimization for industrial applications. As a 30A N-channel MOSFET in an ultra-compact DPAK package, it maximizes current handling within the most stringent footprint constraints.

Key Features:

  • 80V voltage rating
  • 30A continuous current capability
  • 58mΩ typical RDS(on)
  • Compact yet rugged DPAK package
  • Wide -40°C to 150°C operating temperature range
  • Optimized for solar inverters, welding equipment and HVAC controls
  • Simply offers the highest performance solution for ultra-dense designs

DPAK package balances excellent thermal dissipation with proven durability.

Extremely wide operating temperature range suits diverse industrial climates.

Ultra-low RDS(on) ensures maximum efficiency even with tight space limitations.

Ideal choice for innovations requiring absolute minimal footprint implementation.

Simply enables leading-edge density for industrial power system optimization.

Allows boundary-pushing integration previously impossible due to size barriers.

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