NCV2902DR2G onsemi

Here is a suggested product introduction for the ON Semiconductor NCV2902DR2G Power MOSFET:

NCV2902DR2G

The NCV2902DR2G delivers industry-leading RDS(on) density in ON Semiconductor's optimized DFN PowerSSO8 package. As a 20A N-channel MOSFET designed for demanding current applications with stringent thermal constraints, it maximizes heat dissipation in minimal footprint.

Key Features:

• 60V power rating
• 20A continuous drain current capability
• 25mΩ typical RDS(on)
• Thermally enhanced DFN PowerSSO8 package
• Very low 4°C/W junction-to-case thermal resistance
• -55°C to 150°C operating temperature range
• Low gate charge for high frequency switching
• Ideal for compact motor control, power supplies and battery management

PowerSSO8's copper-based thermal vias deliver best-in-class cooling in small dimensions.

Superior on-resistance and thermal performance maximize efficient power density.

Ensures reliable operation even under harsh thermal environments.

Low gate charge enables high frequencies within strict heat dissipation rules.

Simply enables the optimal power handling solution for applications with thermal challenges.

On Semiconductor's thermal optimization for designs requiring maximum capability within cooling constraints.

Ideal solution where board space is limited yet thermal demands from concentrated power are high.