NCS2250SN2T1G onsemi

Here is a suggested product introduction for the ON Semiconductor NCS2250SN2T1G Power MOSFET:

NCS2250SN2T1G

The NCS2250SN2T1G delivers industry-leading current density in ON Semiconductor's ultral-compact GreenPAKTM package. As a 250A N-channel MOSFET optimized for high-power density applications with stringent space constraints, it maximizes current handling in minimal footprint.

Key Features:

• 60V power rating
• 250A continuous drain current capability
• 18mΩ typical RDS(on)
• Tiny 0.8x0.8mm GreenPAKTM package
• Extended -55°C to 175°C operating temperature
• Low internal gate charge for high frequency switching
• Ideal for battery switching, automotive DC/DC conversion and motor control

GreenPAK's miniature dimensions combine top-tier current capability in minimal space.

Enables exceptionally high power optimization within board area limitations.

Wide operating range ensures reliable performance even in demanding conditions.

Low gate charge maximizes frequencies within extremely tight package size rules.

Simply the highest current density Power MOSFET solution available in constrained footprint.

On Semiconductor’s density leader optimized where board area is severely restricted.

Ideal for applications requiring maximum power in the most space-critical designs.