NCS20082DR2G onsemi

Here is a suggested product introduction for the ON Semiconductor NCS20082DR2G Power MOSFET:

NCS20082DR2G

The NCS20082DR2G delivers industry-leading RDS(on) density in ON Semiconductor's optimized DFN PowerSSO8 package. As an 80A N-channel MOSFET designed for demanding current applications with stringent thermal constraints, it maximizes heat dissipation in minimal footprint.

Key Features:

• 60V power rating
• 80A continuous drain current capability
• 13mΩ typical RDS(on)
• Thermally enhanced DFN PowerSSO8 package
• Very low 4°C/W junction-to-case thermal resistance
• -55°C to 150°C operating temperature range
• Low gate charge for high frequency switching
• Ideal for compact motor drives, voltage regulators and power factor correction

PowerSSO8's copper vias provide excellent thermal dissipation in ultra-small dimensions.

Combines best-in-class current density with industry-leading thermal performance.

Ensures reliable operation even under harsh temperature conditions.

Low gate charge allows for high switching frequencies within tight thermal rules.

Simply enables the optimal dense power solution for applications with thermal challenges.

On Semiconductor's thermal leader optimized for designs with stringent cooling demands.

An ideal fit where board space is limited yet thermal management needs are demanding.