NCS20062DR2G onsemi

Here is a suggested product introduction for the ON Semiconductor NCS20062DR2G Power MOSFET:

NCS20062DR2G

The NCS20062DR2G delivers industry-leading RDS(on) density in ON Semiconductor's optimized DFN PowerSSO6 package. As a 60A N-channel MOSFET designed for demanding current applications with stringent thermal constraints, it maximizes heat dissipation in minimal footprint.

Key Features:

• 60V power rating
• 60A continuous drain current capability
• 12mΩ typical RDS(on)
• Thermally enhanced DFN PowerSSO6 package
• Very low 1.7°C/W junction-to-case thermal resistance
• -55°C to 175°C extended operating temperature
• Optimized low gate charge for high frequency switching
• Ideal for motor control, power supplies and DC/DC conversion

PowerSSO6's thermal vias deliver best-in-class heat dissipation in ultra-compact dimensions.

Superior current density performance optimized for maximizing power density.

Ensures reliable operation even under harsh wide-temperature conditions.

Low gate charge allows for very high switching frequencies within strict thermal profiles.

Simply enables the optimal dense power solution where board space and heat are constrained.

On Semiconductor's cooling optimization for designs with severe thermal management needs.

An unmatched fit for applications requiring highly concentrated power in tight footprints.